Similarities and Difference between MOSFET and IGBT
In this article, we are going to discuss the detailed comparison between MOSFET and IGBT means we will discuss what similarities and differences between them. We also discuss how they are used for different applications.
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor whereas IGBT stands for Insulated Gate Bipolar Transistor.
Let's know the similarities between MOSFET and IGBT.
MOSFET and IGBT Similarities
1. MOSFET and IGBT both are solid-state semiconductor devices integrated into a single piece of Silicon.
2. Although a BJT is a current-controlled device, but both IGBT and MOSFET are voltage-controlled devices.
3. IGBT and MOSFET, both of them can be used as a static electronic switch.
4. IGBT and MOSFET both have insulation between the Gate and other terminals.
5. IGBT and MOSFET both have high input impedance.
Difference between MOSFET and IGBT
1. The main difference between IGBT and MOSFET is, IGBT is suitable for medium to very high current conduction and controlling whereas the MOSFET is suitable for low to medium current conduction and controlling.
2. IGBT is not suitable for high-frequency applications, it can perform well up to a few Kilo Hartz frequencies, but MOSFET is most suitable for very high-frequency applications, it can perform well at mega Hartz frequencies.
3. The switching speed of an IGBT is very low, whereas MOSFET provides very fast switching facilities.
4. IGBT can handle very high voltage and high power but MOSFET only suitable for low to medium voltage and power applications.
5. IGBT produces a lower forward voltage drop when it conducts current, but MOSFET produces a more forward voltage drop compared to IGBT.
6. IGBT has a larger turnoff time whereas MOSFET has a smaller turnoff time.
7. IGBT has three terminals named Emitter, Collector, and Gate whereas the MOSFET has also three terminals named as Source, Gate, and Drain.
8. IGBT has a PN Junction in its construction but MOSFET does not have any PN Junction.
9. IGBT can handle any transient voltage and current, but the operation of a MOSFET gets disturbed when transient voltage occurs.
10. MOSFETs are low-cost devices whereas IGBTs are high-cost devices.
11. IGBTs are most suitable for high-power AC applications whereas MOSFETs are most suitable for low-power DC applications.
Applications of IGBT and MOSFET
IGBTs are used for low-frequency, high-power applications such as Industrial Inverters, UPS, Power controllers, etc. IGBT is also used in three-phase inverters, VFDs which work with high voltage and high current. IGBT is mainly designed for use in Power Electronics applications.
MOSFETs are used for high-frequency, low-power applications such as Pulse Width Modulation(PWM) circuits, single-phase inverters, High-frequency amplifier circuits, Digital electronic circuits, etc. MOSFET is designed for use in power electronics as well as digital electronics circuits.
Key Advantages of IGBT
1. It is capable to handle and conduct medium to ultra-high voltage and high current.
2. Its operation no got disturbed when a surge voltage occurs.
3. It provides a very high gate insulation feature.
4. It produces a very low forward voltage drop during current conduction.
Disadvantages of IGBT
1. It is not suitable for high-frequency applications.
2. Its switching speed is slow compared to others such as SCR, MOSFET, etc.
3. IGBT has a larger turnoff time.
Advantages of MOSFET
1. It is most suitable for high-frequency applications.
2. It provides a very fast switching facility.
3. It is capable of handling noise signals.
4. It is a compact and easily available low-cost device.
Disadvantages of MOSFET
1. It is not capable of handling high current, voltage, and power.
2. Its operation gets disturbed if surge voltage occurs.
3. It produces a more forward voltage drop compared to IGBT.
Similarities and Difference between MOSFET and IGBT
Reviewed by Author
on
October 15, 2020
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Reviewed by Author
on
October 15, 2020
Rating: